III-V semiconductors; S-parameters; frequency response; gallium compounds; high electron mobility transistors; low noise amplifiers; oscillators; phase noise; radiofrequency amplifiers; semiconductor device models; semiconductor device noise; wide band gap semiconductors; 1/f noise; GaN; HEMT; ISF; LNA; MIT virtual source RF model; MVSG model; RF low noise amplifier; RF-circuit element; S-parameter; antenna switch; carrier charge; device-flicker; device-level noise; frequency 1.4 GHz; frequency 5.9 GHz; frequency response; high electron mobility transistor; impulse sensitivity function; large-signal device-switching behavior; noise figure measurement; noise-dominated phase noise; oscillator design; pseudoinvertor ring oscillator; voltage 12 V; Gallium nitride; Integrated circuit modeling; Mathematical model; Noise measurement; Phase noise; Radio frequency;
机译:GaN电源IC设计使用MIT虚拟源GANFET紧凑型型号,具有栅极泄漏和V_T不稳定效果
机译:基于开源设计工具的城市园艺遥感与遥感与行动的景观虚拟化
机译:基于精确的S参数和噪声模型的CPW技术中的高性能60 GHz伪变形MODFET LNA的设计和表征
机译:MIT虚拟源RF模型作为基于GaN的LNA和振荡器设计的工具
机译:数控机床运动控制系统逻辑模型的开发及其在虚拟机床设计中的应用。
机译:通过虚拟源的降序建模快速优化多源热疗器的温度
机译:在3D虚拟环境中支持基于模型的用户界面设计的工具