Inst. for Commun. Eng. RF-Syst., Johannes Kepler Univ., Linz, Austria;
BiCMOS integrated circuits; Ge-Si alloys; millimetre wave amplifiers; wideband amplifiers; GBW; SiGe; SiGe BiCMOS technology; bandwidth 46 GHz; bandwidth T-type input; broadband amplifier; frequency 140 GHz to 180 GHz; frequency 400 GHz; fully differential cascode topology; gain-bandwidth product; output matching networks; power 132 mW; size 0.13 mum; Bandwidth; Broadband communication; Frequency measurement; Gain; Power generation; Power measurement; Silicon germanium;
机译:2.1 GHz 30 DBM功率放大器在0.18 M SiGe BICMOS过程中
机译:具有串联共面变压器功率分配器和合并器的55nm SiGe BiCMOS中的1.29W / mm 2 sup> 23-dBm 66-GHz功率放大器
机译:采用SiGe BiCMOS技术的15.5 dBm 160 GHz高增益功率放大器
机译:140-180-GHz宽带放大器,具有7 dBm OP1DB和SIGE BICMOS的400 GHz GBW
机译:使用SiC HEMT器件上的GaN的3.6 GHz Doherty功率放大器,其饱和输出功率为40 dBm。
机译:A 200-GHz电感调谐VCO $ - $ 7-DBM SIGE BICMOS中的$ 7-DBM输出功率