A 2.1 GHz 30 dBm power amplifier in 0.18 m SiGe BiCMOS process

摘要

A cascode power amplifier (PA) fabricated in 0.18 m SiGe BiCMOS technology is presented. The cascode structure is used to provide high voltage gain and high output power. To prevent the negative impact of bond wire, the pseudo-differential structure is used to provide a virtual ground for signal. Adaptive bias circuit provides stable voltage bias to the base of common-emitter. With the combination of two completely symmetrical PA units, the whole PA achieves its saturated output power of 30.62 dBm and PAE of 31.75% at 2.1 GHz, and the small signal gain is 26.19 dB.