Nuvotronics, Durham, NC, USA;
III-V semiconductors; MMIC power amplifiers; heterojunction bipolar transistors; indium compounds; integrated circuit manufacture; lead bonding; micromachining; power combiners; power dividers; CPW transition; DHBT PA MMIC; G-band solid state power amplifier; InP; Nuvotronics; PolyStrata 3D additive fabrication process; SSPA; batch additive manufacturing process; broadband transitions; frequency 200 GHz to 230 GHz; functional power density; insertion loss; microlength-wire-bonds; micromachined WR4 E-probe; power 380 m;