首页>外文会议>其他>European Symposium on Reliability of Electron Devices, Failure Physics and Analysis

European Symposium on Reliability of Electron Devices, Failure Physics and Analysis

召开年：
召开地：
出版时间：-

会议文集：-

会议论文

热门论文

全部论文

全选（0）

1.Soldered joints on leaded components: development of a design tool to predict failure during temperature cycle tests

机译：焊接部件上的焊接接头：开发设计工具，以预测温度循环测试期间的故障
- 作者：Wolbert P.M.M.;Brombacher A.C.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
2.Validation of yield models with CMOS/SOS test structures

机译：具有CMOS / SOS测试结构的产量模型的验证
- 作者：Riviere V.;Toubul A.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
3.Pulsed stress reliability investigations of schottky diodes and HBTS

机译：肖特基二极管和HBTS的脉冲应力可靠性调查
- 作者：Schubler M.;Krozew V.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
4.Reproducibility of field failures by ESD models - comparison of HBM, socketed CDM and non-socketed CDM

机译：ESD模型现场故障的再现性 - HBM，插槽CDM和非插槽CDM的比较
- 作者：Broddeck T.;Bauch H.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
5.Study of the microstructure of IC interconnect metallisations using analytical transmission electron microscopy and secondary ion mass spectrometry

机译：使用分析透射电子显微镜和二次离子质谱法研究IC互连金属化的微观结构
- 作者：Cosemans P.;DOlieslaeger M.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
6.Threshold voltage degradation in plasma damaged cmos transistors - role of electron and hole traps related to charging damage

机译：等离子体损坏的CMOS晶体管阈值电压劣化 - 电子和孔陷阱与充电损坏的作用
- 作者：Brozek T.;Chan Y.D.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
7.Comprehensive gate-oxide reliability evaluation for dram processes

机译：DRAM过程的综合栅极 - 氧化物可靠性评估
- 作者：Vollertsen R.-P.;Abadeer W.W.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
8.Turn-on speed of grounded gate NMOS ESD protection transistors

机译：接地门NMOS ESD保护晶体管的开启速度
- 作者：Meneghesso G.;Luchies J.R.M.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
9.Simulation of the gate burnout of GaAs MESFET

机译：Gaas Mesfet的栅极燃烧仿真
- 作者：Vashchenko V.A.;Martynov J.B.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
10.A wafer level reliability method for short-loop processing

机译：用于短路处理的晶片级可靠性方法
- 作者：Duluc J.B.;Zimmer T.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
11.Design of a test structure to evaluate electro-thermomigration in power ICs

机译：测试结构的设计，以评估电力IC中的电热迁移
- 作者：de Munari I.;Speroni F.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
12.Examination of reflow resistance for copper frame SMD products

机译：铜架SMD产品的回流抗力检查
- 作者：Setoya T.;Matsuura T.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
13.Enhancement of t/sup bd/ of MOS gate oxides with a single-step pre-stress prior to a CVS in the fowler-nordheim regime

机译：在Fowler-Nordheim政权的CVS之前，在CVS之前提高T / SUP BD / MOS栅极氧化物的氧化物预压力
- 作者：Martin A.;Ribbock T.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
14.Designing circuits and processes to optimize performance and reliability: metallurgy meets TCAD

机译：设计电路和流程以优化性能和可靠性：冶金符合TCAD
- 作者：Thompson C.V.;Knowlton B.D.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
15.Improved critical area prediction by application of pattern recognition techniques

机译：通过应用模式识别技术改进了临界区域预测
- 作者：Mattick J.H.N.;Kelsall R.W.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
16.Microdac - a novel approach to measure in situ deformation fields of microscopic scale

机译：Microdac - 一种新的微观尺度变形领域测量的新方法
- 作者：Vogel D.;Schubert A.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
17.Simulation study for the CDM ESD behaviour of the grounded-gate NMOS

机译：基于NMOS的CDM ESD行为的仿真研究
- 作者：Russ C.;Verhaege K.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
18.Drain current DLTS analysis of recoverable and permanent degradation effects in AlGaAs/GaAs and AlGaAs/InGaAs HEMT'S

机译：排水电流DLTS在AlgaAs / GaAs和Algaas Hemt中的可回收和永久性降解效应分析
- 作者：Meneghesso G.;Haddab Y.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
19.Experimental validation of mechanical stress models by micro-raman spectroscopy

机译：微拉曼光谱法的实验验证机械应力模型
- 作者：de Wolf I.;Pozzat G.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
20.Wafer level measurement system for SARF characterization of metal lines

机译：金属线SARF表征的晶片级测量系统
- 作者：Ciofi C.;De Marinis M.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
21.Quality and reliability improvement through defect oriented failure analysis

机译：通过缺陷导向故障分析质量和可靠性提高
- 作者：De Pauw P.;Van Haeverbeke S.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
22.Proceedings of the 7th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis

机译：第七欧洲电子设备可靠性研讨会的诉讼程序，失败物理和分析
- 作者：Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
23.Measurement and modeling of a new width dependence of NMOSFET degradation

机译：NMOSFET降解新宽度依赖性的测量和建模
- 作者：Schuler F.;Kowarik O.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
24.Justifications for reducing HBM and MM ESD qualification test time

机译：减少HBM和MM ESD资格测试时间的理由
- 作者：Verhaege K.;Robinson-Hahn D.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
25.Introduction of plastic encapsulated devices in systems operating under severe temperature conditions

机译：在严重温度条件下运行的系统中塑料封装器件引入
- 作者：Hernandez R.;Le Peuch O.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
26.Effects of metallization lay-out on turn-off failure of modern power bipolar transistors

机译：金属化布局对现代电力双极晶体管关闭故障的影响
- 作者：Busatto G.;Contei A.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
27.Relationship between profile of stress generated interface traps and degradation of submicron LDD MOSFET'S

机译：应力界面轮廓与亚微米LDD MOSFET劣化之间的关系
- 作者：Okhonin S.;Hessler T.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
28.A new analytic model for the description of the intrinsic oxide breakdown statistics of ultra-thin oxides

机译：一种新的分析模型，用于描述超薄氧化物的内在氧化氧化物分解统计
- 作者：Degreave R.;Roussel P.H.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
29.The application of advanced techniques for complex focused-ion-beam device modification

机译：高级技术应用复杂聚焦离子束装置改造的应用
- 作者：Abramo M.T.;Hahn L.L.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
30.Hot-carrier reliability of n- and p- channel MOSFETS with polysilicon and CVD tungsten-polycide gate

机译：具有多晶硅和CVD钨 - 多纤维栅极的N和P-通道MOSFET的热载波可靠性
- 作者：Lou C.L.;Chim W.K.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
31.Resistance changes due to cu transport and precipitation during electromigration in submicrometric Al-0.5Cu lines

机译：由于Cu型Al-0.5％Cu系中电迁移期间Cu运输和沉淀因耐抗抗性的变化
- 作者：Scorzoni A.;de Murani I.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
32.The GaAs heterojunction bipolar transistor: an electron device with optical device reliability

机译：GaAs异质结双极晶体管：具有光学装置可靠性的电子器件
- 作者：Henderson T.S.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
33.Influence of the ferroelectric domain structure and switching properties on the endurance of PZT ferroelectric capacitors

机译：铁电畴结构的影响及开关性能对PZT铁电电容的耐久性
- 作者：Wouters D.J.;Maes H.E.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
34.DC9, LF dispersion and HF characterisation of short-time stressed inp based LM-HEMTS

机译：DC9，LF分散和HF基于短时的基于LM-HEMT的STIM
- 作者：Schreurs D.;Spiers A.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
35.Reliability and degradation behaviors of semi-insulating fe-doped InP buried hetero structure lasers fabricated by MOVPE and dry etching technique

机译：半绝缘Fe掺杂INP埋藏异结构激光器的可靠性和降解行为，由MOVPE和干蚀刻技术制造
- 作者：Mawatari H.;Fukuda M.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
36.The influence of process variations on the robustness of an audio power IC

机译：过程变化对音频电源稳健性的影响
- 作者：Krabbenborg B.;Van Der Pol J.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
37.Comprehensive physical modeling of NMOSFET hot-carrier-induced degradation

机译：NMOSFET热载体诱导降解的综合物理建模
- 作者：Lunenborg M.M.;de Graaff H.C.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
38.Efficient output ESD protection for 0.5-/spl mu/m high-speed CMOS SRAM IC with well-coupled technique

机译：具有耦合耦合技术的0.5- / SPL MU / M高速CMOS SRAM IC的高效输出ESD保护
- 作者：Ming-Dou Ker;Chau-Neng Wu;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
39.Characterisation of chip-on-board and flip chip packaging technologies by acoustic microscopy

机译：声学显微镜表征芯片板载与倒装芯片包装技术
- 作者：Lawton W.;Barrett J.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
40.Assessment of oxide charge density and centroid from fowler-nordheim derivative characteristics in MOS structures after uniform gate stress

机译：均匀栅极应力后MOS结构中Fowler-Nordheim衍生物特性评估氧化物电荷密度和质心
- 作者：Kies R.;Egilsson T.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
41.Risetime effects of HBM and square pulses on the failure thresholds of GGNMOS transistors

机译：HBM和方脉冲对GGNMOS晶体管的故障阈值的riseTime效应
- 作者：Musshoff C.;Wolf H.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
42.Automotive and aerospace electronic systems. Dependability requirements

机译：汽车和航空航天电子系统。可靠性要求
- 作者：Rose P.D.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
43.The impact of oxide degradation on the low frequency (I/F) noise behaviour of P channel MOSFETS

机译：氧化物劣化对P信道MOSFET的低频（I / F）噪声行为的影响
- 作者：Hurley P.K.;Sheehan E.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
44.A comparison of focused ion beam and electron beam induced deposition processes

机译：聚焦离子束和电子束诱导沉积过程的比较
- 作者：Lipp S.;Frey L.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
45.Nanoscopic evaluation of semiconductor properties by scanning probe microscopies

机译：扫描探针微观纳米镜评价半导体性能
- 作者：Balk L.J.;Heiderhoff R.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
46.Evaluation of structural degradation in packaged semiconductor components using a transient thermal characterisation technique

机译：使用瞬态热表征技术评估封装半导体部件的结构降解
- 作者：Christriaens F.;Vandevelde B.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
47.New experimental findings on hot carrier effects in deep submicrometer surface channel PMOS

机译：深度亚微米表面通道PMOS中热载波效应的新实验结果
- 作者：Jong Tae Park;Sung Jun Jang;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
48.Reliability improvement of single-poly quasi self-aligned bicmos BJTS using base surface arsenic compensation

机译：使用基础表面砷补偿单聚准自对准BICMOS BJT的可靠性改进
- 作者：Vendrame L.;Gravier T.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
49.The isocurrent test: a promising tool for wafer-level evaluation of the interconnect reliability

机译：Isocurrent测试：用于互连可靠性的晶片级评估的有希望的工具
- 作者：Witvrow A.;Van Dooren S.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
50.Copper interconnection lines: SARF characterization and lifetime test

机译：铜互连线：SARF表征和寿命测试
- 作者：Ciofi C.;Damlo V.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
51.Reliability indicators for lift-off of bond wires in IGBT power-modules

机译：IGBT电源模块中粘合线升降的可靠性指示灯
- 作者：Farokhzad B.;Turkes P.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
52.ESD protection to overcome internal gate oxide damage on digital-analog interface of mixed-mode CMOS IC's

机译：ESD保护以克服混合模式CMOS IC的数字模拟界面内的内部栅极氧化物损伤
- 作者：Ming-Dou Ker;Ta-Lee Yu;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
53.Characterisation of reliability of compound semiconductor devices using electrical pulses

机译：使用电脉冲的化合物半导体器件可靠性表征
- 作者：Brandt M.;Krozer V.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
54.Relation between yield and reliability of integrated circuits and application to failure rate assessment and reduction in the one digit FIT and PPM reliability era

机译：集成电路产量与可靠性的关系及对故障率评估的应用和PPM可靠性时代的故障率评估和减少
- 作者：Van der Pol J.A.;Kuper F.G.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
55.Oxide breakdown decrease by oxide growth projection of implantation-caused stacking faults - a characterization case study using atomic force microscopy

机译：通过植入引起的堆叠故障的氧化物生长投影减少氧化物分解 - 使用原子力显微镜的表征案例研究
- 作者：Jacob P.;Hoeppner K.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
56.Investigation of trapped charge in oxides under fowler-nordheim stress using low bias conditions

机译：使用低偏压条件调查福勒 - 诺德海姆胁迫下氧化物捕获电荷
- 作者：Duane R.;Martin A.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
57.Pulsed thermal characterization of a reverse biased pn-junction for ESD HBM simulation

机译：用于ESD HBM仿真的反向偏置PN结的脉冲热表征
- 作者：Wolf H.;Gieser H.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
58.The effect of hot electron stress on the DC and microwave characteristics of AlGaAs/InGaAs/GaAs PHEMTs

机译：热电子应力对Algaas / Ingaas / GaAs Phemts的DC和微波特性的影响
- 作者：Menozzi R.;Borgarino M.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
59.A current self-limited protective device studied by LF-noise measurements

机译：通过LF噪声测量研究的电流自限制保护装置
- 作者：Modjtahedi A.;Lamaignere L.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
60.Reliability of a focused ion beam repair on digital CMOS circuits

机译：数字CMOS电路上聚焦离子束修复的可靠性
- 作者：Van Camp R.;Van Doorselaer K.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
61.Author Index

机译：作者索引
- 作者：Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
62.Analysis of the surface base current drift in GaAs HBT's

机译：GaAs HBT的表面基极电流漂移分析
- 作者：Maneux C.;Labat N.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
63.AC effects in IC reliability

机译：IC可靠性的交流效应
- 作者：Chenming Hu;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
64.Electric field dependence of TDDB activation energy in ultrathin oxides

机译：TDDB活化能量在超薄氧化物中的电场依赖性
- 作者：Vincent E.;Revil N.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
65.SEGR: a unique failure mode for power mosfets in spacecraft

机译：SEGR：航天器中电源MOSFET的独特故障模式
- 作者：Allenspach M.;Brews J.R.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
66.Influence of parasitic structures on the ESD performance of a pure bipolar process

机译：寄生结构对纯双极过程的ESD性能的影响
- 作者：Nikolaidis T.;Richier C.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
67.A new wafer level reliability method for evaluation of ionic induced PMOSFET drift effects

机译：一种新的晶圆级可靠性方法，用于评估离子诱导的PMOSFET漂移效果
- 作者：Dreizner A.;Nagel J.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
68.A new physics-based model for time dependent dielectric breakdown

机译：基于新的基于物理的时间依赖性介电击穿模型
- 作者：Schlund B.I.;Suehle J.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
69.A new method to determine the influence of thermomechanical stress on the reliability of metal lines in integrated circuits

机译：一种确定热机械应力对集成电路金属线可靠性影响的新方法
- 作者：Glasow A.v.;Kammer H.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
70.A new statistical model for fitting bimodal oxide breakdown distributions at different field conditions

机译：一种新的统计模型，用于不同现场条件下的双峰氧化物分解分布
- 作者：Degraeve R.;Roussel Ph.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
71.Wafer level reliability: process control for reliability

机译：晶圆级可靠性：可靠性的过程控制
- 作者：Turner T.E.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
72.A practical system for hot spot detection using fluorescent microthermal imaging

机译：使用荧光微移成像的热点检测实用系统
- 作者：Glacet J.-Y.;Berne S.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
73.In-situ monitoring of dry corrosion degradation of au ball bonds to al bond pads in plastic packages during HTSL

机译：HTSL期间塑料包装中Au球键对Al键焊盘的干腐蚀降解的原位监测
- 作者：Ragay F.W.;Pol J.A.v.d.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
74.Study of the soft leakage current induced ESD on LDD transistor

机译：LDD晶体管软漏电流诱导ESD的研究
- 作者：Wada T.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
75.A new technique to characterize the early stages of electromigration-induced resistance changes at low current densities

机译：一种新技术，以表征电迁移诱导的电阻变化的早期阶段在低电流密度下
- 作者：DHaeger V.;de Ceuninck W.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
76.Study on the reliability of an InP/InGaAsP integrated laser modulator

机译：INP / INGAASP集成激光调制器可靠性研究
- 作者：Hornung V.;Le Du F.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
77.Question marks to the extrapolation to lower temperatures in high temperature storage life (HTSL) testing in plastic encapsulated IC'S

机译：塑料封装IC中的高温储存寿命（HTSL）测试中的外推的问号为较低的温度
- 作者：Schuddeboom W.;Wubbenhorst M.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
78.Finite element investigations of mechanical stress in metallization structures

机译：金属化结构中机械应力的有限元研究
- 作者：Weide K.;Yu X.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年
79.Method for precise determination of the statistical distribution of the input offset voltage of differential stages

机译：精确确定差分阶段输入偏移电压统计分布的方法
- 作者：Thewes R.;Schindhelm T.;Institute of Electric and Electronic Engineer
- 会议名称：《European Symposium on Reliability of Electron Devices, Failure Physics and Analysis》 | 1996年