Assessment of oxide charge density and centroid from fowler-nordheim derivative characteristics in MOS structures after uniform gate stress

摘要

A new method for the extraction of the oxide charge density and distribution centroid based on the exploitation of the Fowler plot derivative characteristics is proposed. The comparison with the DiMaria method confirms the overall consistency of the new approach. The presence of negative charge within the oxide is shown to be responsible for an increase in the apparent Fowler barrier height after uniform gate stress.