Generation of Interface States in Nitrided Oxide Gate Dielectrics by Ionizing Radiation and Fowler-Nordheim Stressing

摘要

The nitridation of silicon dioxide gate dielectrics for metal-oxide-semiconductor (MOS) devices has been reported by a number of researchers to reduce interface state generation under electrical stress and ionizing radiation. However, recently Jayaraman and others reported that a light nitridation achieved through reduced pressure yielded a dielectric which exhibited interface state generation under Fowler-Nordheim stressing greater than that of the unaltered oxide. Similar results have been reported by Terry and Hori and Iwasaki.. In this letter we report an investigation of this phenomenon. Light and heavy nitridations were achieved through variation of the nitridation temperature, and interface state generation was studied during Fowler-Nordheim stressing and after exposure ot ionizing radiation. Reprints. (jes)