INTERFACE LAYER REDUCTION METHOD, METHOD FOR FORMING HIGH DIELECTRIC CONSTANT GATE INSULATING FILM, HIGH DIELECTRIC CONSTANT GATE INSULATING FILM, HIGH DIELECTRIC CONSTANT GATE OXIDE FILM, AND TRANSISTOR HAVING HIGH DIELECTRIC CONSTANT GATE OXIDE FILM

摘要

high-k gate insulating film formed on the substrate as , SiO _{X according to formed between} of the interface layer such as a gate insulating film and the substrate , the effective dielectric constant of the gate insulating film is reduced. Accordingly, the present invention discloses a method for reducing the interface layer reduces the thickness of the interface layer . The interface layer is the reduction method , (a) on the semiconductor layer , forming an oxide of the first metal oxide layer via the interface layer as the semiconductor ; And , (b) on the first metal oxide film , forming an oxide of the second metal atom is larger than that of the first metal ; and a . ;