Electrical Properties of Plasma Deposited Low-Dielectric-Constant Fluorinated Amorphous Carbon Films

摘要

Fluorinated amorphous carbon (a-C:F) films were deposited at room temperatureusing C_4F_8 and CH_4 as precursor gases by electron cyclotron resonance chemical vapour deposition(ECR-CVD).Chemical structures were analysed using X-ray photoelectron spectroscopy (XPS).The current conduction Shows ohmic behaviour and the leakage current increases with the contentof C sp^2 in the deposited a-C:F films at a low electric field The behaviour of the leakage currentis well explained by the Poole-Frankel mechanism at a high electric field.The interface traps,rather than-chemical structures,of a-C:F films determine the PF emission current.