Piezoelectrical Properties of Plasma Layers Zn-Bi-O

摘要

The paper presents specific piezoelectric properties of thin layers of zinc oxide modified with bismuth (Zn-Bi-O).The purpose of the presented work was to find the relation between the technological parameters of receiving thin films (density power deposited on target,reactive gas pressure,distance from the substrate to the target) and the piezoelectric properties d_(33).The thin layers of Zn-Bi-O were obtained in a reactive process of magnetron sputtering of the metallic target Zn-Bi.As a result of the technological processes involved in research,a coefficient value d_(33) has been received in the ranges of 1-10 pC/N.The next step is to find the most suitable technological parameters in order to obtain optimum piezoelectric properties of the thin films Zn-Bi-O.