interface layer reduction method, the method of forming the high dielectric constant gate insulating film, a high dielectric constant gate insulating film, a high k gate oxide film, and a transistor having a high dielectric constant gate oxide layer

摘要

When deposited on a substrate of high dielectric constant film as issue gate insulating film, the interface layer of the SiO _x or the like is formed at the interface therebetween, the effective dielectric constant of the gate insulating film is lowered. comprising the steps of: [SOLUTION] in (a) a semiconductor layer, forming a film of oxide of the first metal through the oxide layer of the semiconductor as an interfacial layer, an oxide of the metal (b) the first It is a surface layer reduction method on the membrane, and a step of forming a film of metal oxides large second valence than the first metal, reducing the thickness of the interfacial layer. [Selection] Figure Figure 1