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Interface trap and oxide charge generation under negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin plasma-nitrided SiON gate dielectrics

机译：具有超薄等离子体 - 氮化SiON电介质的P沟道金属氧化物半导体场效应晶体管负偏置温度不稳定性下的界面阱和氧化物电荷产生

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Shiyang Zhu; Anri Nakajima; Takuo Ohashi; Hideharu Miyake;
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年度 2005
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1. Interface trap and oxide charge generation under negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin plasma-nitrided SiON gate dielectrics [J] . Shiyang Zhu, Anri Nakajima, Takuo Ohashi, Journal of Applied Physics . 2005,第11期

机译：具有超薄等离子氮化SiON栅极电介质的p沟道金属氧化物半导体场效应晶体管在负偏置温度不稳定性下的界面陷阱和氧化物电荷产生
2. Influence of bulk bias on negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin SiON gate dielectrics [J] . Shiyang Zhu, Anri Nakajima, Takuo Ohashi, Journal of Applied Physics . 2006,第6期

机译：体偏置对具有超薄SiON栅极电介质的p沟道金属氧化物半导体场效应晶体管的负偏置温度不稳定性的影响
3. Bulk and interface trap generation under negative bias temperature instability stress of p-channel metal-oxide-semiconductor field-effect transistors with nitrogen and silicon incorporated HfO_2 gate dielectrics [J] . Changhwan Choi, Jack C. Lee Applied Physics Letters . 2011,第6期

机译：在负偏压温度不稳定性应力作用下，掺入氮和硅的HfO_2栅极电介质的p沟道金属氧化物半导体场效应晶体管产生体和界面陷阱
4. Effect of strain on Negative Bias Temperature Instability of Germanium p-channel Field-Effect Transistor with high-к gate dielectric [C] . Bin Liu, Lim P.S.Y., Yee-Chia Yeo 2010 IEEE International Reliability Physics Symposium . 2010

机译：应变对高k栅介电常数锗p沟道场效应晶体管负偏置温度不稳定性的影响
5. Atomic-scale defects involved in the negative bias temperature instability in silicon dioxide and plasma-nitrided oxide based pMOSFETs. [D] . Campbell, Jason P. 2007

机译：二氧化硅和基于等离子体氮化的氧化物的pMOSFET的负偏置温度不稳定性所涉及的原子尺度缺陷。
6. Highly gate-tuneable Rashba spin-orbit interaction in a gate-all-around InAs nanowire metal-oxide-semiconductor field-effect transistor [O] . K. Takase, Y. Ashikawa, G. Zhang, -1

机译：全方位栅InAs纳米线金属氧化物半导体场效应晶体管中的高度栅可调Rashba自旋轨道相互作用
7. Influence of bulk bias on negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin SiON gate dielectrics [O] . Shiyang Zhu, Anri Nakajima, Takuo Ohashi, 2006

机译：大偏压对具有超薄栅极电介质P沟道金属氧化物半导体场效应晶体管负偏置温度不稳定性的影响

Interface trap and oxide charge generation under negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin plasma-nitrided SiON gate dielectrics

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