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Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on

召开年：1996
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1.Proceedings of the 7th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis

机译：第七届欧洲电子设备可靠性，故障物理与分析研讨会论文集
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
2.Automotive and aerospace electronic systems. Dependability requirements

机译：汽车和航空电子系统。可靠性要求
- 作者：Rose P.D.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
3.AC effects in IC reliability

机译：交流电对IC可靠性的影响
- 作者：Chenming Hu
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
4.Soldered joints on leaded components: development of a design tool to predict failure during temperature cycle tests

机译：含铅部件上的焊接点：开发设计工具以预测温度循环测试期间的故障
- 作者：Wolbert P.M.M.;Brombacher A.C.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
5.Comprehensive gate-oxide reliability evaluation for dram processes

机译：DRAM工艺的综合栅极氧化物可靠性评估
- 作者：Vollertsen R.-P.;Abadeer W.W.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
6.Designing circuits and processes to optimize performance and reliability: metallurgy meets TCAD

机译：设计电路和工艺以优化性能和可靠性：冶金学符合TCAD
- 作者：Thompson C.V.;Knowlton B.D.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
7.Nanoscopic evaluation of semiconductor properties by scanning probe microscopies

机译：通过扫描探针显微镜对半导体性能进行纳米评估
- 作者：Balk L.J.;Heiderhoff R.;Koschinki P.;Maywald M.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
8.Relation between yield and reliability of integrated circuits and application to failure rate assessment and reduction in the one digit FIT and PPM reliability era

机译：一位数的FIT和PPM可靠性时代，集成电路的良率和可靠性之间的关系及其在故障率评估和降低中的应用
- 作者：Van der Pol J.A.;Kuper F.G.;Ooms E.R.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
9.The GaAs heterojunction bipolar transistor: an electron device with optical device reliability

机译：GaAs异质结双极晶体管：具有光学器件可靠性的电子器件
- 作者：Henderson T.S.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
10.Wafer level reliability: process control for reliability

机译：晶圆级可靠性：过程控制的可靠性
- 作者：Turner T.E.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
11.Design of a test structure to evaluate electro-thermomigration in power ICs

机译：设计用于评估功率IC中电热迁移的测试结构
- 作者：de Munari I.;Speroni F.;Reverberi M.;Neva C.;Lonzi L.;Fantini F.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
12.Enhancement of t/sup bd/ of MOS gate oxides with a single-step pre-stress prior to a CVS in the fowler-nordheim regime

机译：在福勒-诺德海姆体系中，在CVS之前通过单步预应力增强t / sup bd /的MOS栅极氧化物
- 作者：Martin;A.;Ribbock;T.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
13.Evaluation of structural degradation in packaged semiconductor components using a transient thermal characterisation technique

机译：使用瞬态热表征技术评估封装半导体组件中的结构退化
- 作者：Christriaens F.;Vandevelde B.;Beyne E.;Rogen J.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
14.Influence of parasitic structures on the ESD performance of a pure bipolar process

机译：寄生结构对纯双极性工艺ESD性能的影响
- 作者：Nikolaidis T.;Richier C.;Reffay M.;Mortini P.;Pananakakis G.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
15.Measurement and modeling of a new width dependence of NMOSFET degradation

机译：NMOSFET退化的新宽度依赖性的测量和建模
- 作者：Schuler F.;Kowarik O.;Keitel-Schulz D.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
16.Microdac - a novel approach to measure in situ deformation fields of microscopic scale

机译：Microdac-一种测量微观尺度原位变形场的新方法
- 作者：Vogel D.;Schubert A.;Faust W.;Dubek R.;Michel B.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
17.A comparison of focused ion beam and electron beam induced deposition processes

机译：聚焦离子束和电子束诱导沉积工艺的比较
- 作者：Lipp S.;Frey L.;Lehrer C.;Demm E.;Pauthner S.;Ryssel H.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
18.A current self-limited protective device studied by LF-noise measurements

机译：通过低频噪声测量研究的电流自限式保护装置
- 作者：Modjtahedi A.;Lamaignere L.;Verdier F.;Toubouli A.;Carmona F.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
19.A new analytic model for the description of the intrinsic oxide breakdown statistics of ultra-thin oxides

机译：描述超薄氧化物本征氧化物分解统计数据的新分析模型
- 作者：Degreave R.;Roussel P.H.;Groeseneken G.;Maes H.E.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
20.A new method to determine the influence of thermomechanical stress on the reliability of metal lines in integrated circuits

机译：确定热机械应力对集成电路中金属线可靠性影响的新方法
- 作者：Glasow A.v.;Kammer H.;Kohlhase A.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
21.A new physics-based model for time dependent dielectric breakdown

机译：一个新的基于物理的，随时间变化的介电击穿模型
- 作者：Schlund B.I.;Suehle J.;Messick C.;Chaparala P.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
22.A new statistical model for fitting bimodal oxide breakdown distributions at different field conditions

机译：拟合不同现场条件下双峰氧化物击穿分布的新统计模型
- 作者：Degraeve R.;Roussel Ph.;Ogier J.L.;Groeseneken G.;Maes H.E.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
23.A new technique to characterize the early stages of electromigration-induced resistance changes at low current densities

机译：在低电流密度下表征电迁移引起的电阻变化的早期阶段的新技术
- 作者：DHaeger V.;de Ceuninck W.;Knuyt G.;de Schepper L.;Stals L.M.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
24.A new wafer level reliability method for evaluation of ionic induced PMOSFET drift effects

机译：评估离子诱导的PMOSFET漂移效应的新晶圆级可靠性方法
- 作者：Dreizner A.;Nagel J.;Schafe R.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
25.A practical system for hot spot detection using fluorescent microthermal imaging

机译：使用荧光微热成像的热点检测实用系统
- 作者：Glacet J.-Y.;Berne S.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
26.A wafer level reliability method for short-loop processing

机译：用于短循环处理的晶片级可靠性方法
- 作者：Duluc J.B.;Zimmer T.;Milet N.;Dom J.P.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
27.Oxide breakdown decrease by oxide growth projection of implantation-caused stacking faults - a characterization case study using atomic force microscopy

机译：氧化物引起的因植入物堆积缺陷引起的氧化物增长投影而减少的击穿-使用原子力显微镜的表征案例研究
- 作者：Jacob P.;Hoeppner K.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
28.Pulsed thermal characterization of a reverse biased pn-junction for ESD HBM simulation

机译：用于ESD HBM仿真的反向偏置pn结的脉冲热特性
- 作者：Wolf H.;Gieser H.;Wilkening W.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
29.Reliability of a focused ion beam repair on digital CMOS circuits

机译：聚焦离子束修复在数字CMOS电路上的可靠性
- 作者：Van Camp R.;Van Doorselaer K.;Clemminck I.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
30.SEGR: a unique failure mode for power mosfets in spacecraft

机译：SEGR：航天器中功率MOSFET的独特故障模式
- 作者：Allenspach M.;Brews J.R.;Galloway K.F.;Johnson G.H.;Schrimpf R.D.;Pease R.L.;Titus J.L.;Wheatley C.F.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
31.The isocurrent test: a promising tool for wafer-level evaluation of the interconnect reliability

机译：等电流测试：用于晶片级互连可靠性评估的有前途的工具
- 作者：Witvrow A.;Van Dooren S.;Wouters D.;Van Dievel M.;Maex K.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
32.Analysis of the surface base current drift in GaAs HBT's

机译：GaAs HBT的表面基极电流漂移分析
- 作者：Maneux C.;Labat N.;Saysset N.;Toubul A.;Danto Y.;Dangla J.;Launay P.;Dumas J.-M.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
33.Assessment of oxide charge density and centroid from fowler-nordheim derivative characteristics in MOS structures after uniform gate stress

机译：从均匀栅极应力后的MOS结构中的Fowler-Nordheim导数特性评估氧化物电荷密度和质心
- 作者：Kies R.;Egilsson T.;Ghibaudo G.;Pananakakis G.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
34.Characterisation of chip-on-board and flip chip packaging technologies by acoustic microscopy

机译：通过声学显微镜表征板载芯片和倒装芯片封装技术
- 作者：Lawton W.;Barrett J.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
35.Characterisation of reliability of compound semiconductor devices using electrical pulses

机译：使用电脉冲表征化合物半导体器件的可靠性
- 作者：Brandt M.;Krozer V.;Schobler M.;Bock K.-H.;Hartnagel H.-L.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
36.Comprehensive physical modeling of NMOSFET hot-carrier-induced degradation

机译：NMOSFET热载流子引起的退化的综合物理建模
- 作者：Lunenborg M.M.;de Graaff H.C.;Mouthaan A.J.;Verweij J.F.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
37.Copper interconnection lines: SARF characterization and lifetime test

机译：铜互连线：SARF表征和寿命测试
- 作者：Ciofi C.;Damlo V.;Neri B.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
38.DC9, LF dispersion and HF characterisation of short-time stressed inp based LM-HEMTS

机译：短时基于inp的LM-HEMTS的DC9，LF色散和HF表征
- 作者：Schreurs D.;Spiers A.;de Raedt W.;Van der Zandem K.;Baeyens Y.;Van Hove M.;Nauwelaers B.;Van Rossum M.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
39.Drain current DLTS analysis of recoverable and permanent degradation effects in AlGaAs/GaAs and AlGaAs/InGaAs HEMT'S

机译：漏极电流DLTS分析AlGaAs / GaAs和AlGaAs / InGaAs HEMT中的可恢复和永久降解效应
- 作者：Meneghesso G.;Haddab Y.;Perrino N.;Canali C.;Zanoni E.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
40.Effects of metallization lay-out on turn-off failure of modern power bipolar transistors

机译：金属化布局对现代功率双极晶体管关断故障的影响
- 作者：Busatto G.;Contei A.;Patti A.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
41.Efficient output ESD protection for 0.5-/spl mu/m high-speed CMOS SRAM IC with well-coupled technique

机译：采用良好耦合技术的0.5- / splμm/ m高速CMOS SRAM IC的高效输出ESD保护
- 作者：Ming-Dou Ker;Chau-Neng Wu
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
42.Electric field dependence of TDDB activation energy in ultrathin oxides

机译：超薄氧化物中TDDB活化能的电场依赖性
- 作者：Vincent E.;Revil N.;Papadas C.;Ghibaudo G.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
43.ESD protection to overcome internal gate oxide damage on digital-analog interface of mixed-mode CMOS IC's

机译：ESD保护可克服混合模式CMOS IC的数模接口上的内部栅极氧化物损坏
- 作者：Ming-Dou Ker;Ta-Lee Yu
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
44.Examination of reflow resistance for copper frame SMD products

机译：铜框架SMD产品的回流电阻测试
- 作者：Setoya T.;Matsuura T.;Furuta K.;Terui Y.;Seokawa Y.;Koike S.;Kishimura Y.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
45.Experimental validation of mechanical stress models by micro-raman spectroscopy

机译：显微拉曼光谱的机械应力模型实验验证
- 作者：de Wolf I.;Pozzat G.;Pinardl K.;Howard D.J.;Ignat M.;Jain S.C.;Maes H.E.
- 会议名称：《》 | 1996年
46.Finite element investigations of mechanical stress in metallization structures

机译：金属化结构中机械应力的有限元研究
- 作者：Weide K.;Yu X.;Menborn F.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
47.Hot-carrier reliability of n- and p- channel MOSFETS with polysilicon and CVD tungsten-polycide gate

机译：具有多晶硅和CVD钨多晶硅栅极的n和p沟道MOSFET的热载流子可靠性
- 作者：Lou C.L.;Chim W.K.;Chan D.S.H.;Pan Y.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
48.Improved critical area prediction by application of pattern recognition techniques

机译：通过模式识别技术的应用改进了关键区域的预测
- 作者：Mattick J.H.N.;Kelsall R.W.;Miles R.E.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
49.Influence of the ferroelectric domain structure and switching properties on the endurance of PZT ferroelectric capacitors

机译：铁电畴结构和开关特性对PZT铁电电容器耐久性的影响
- 作者：Wouters D.J.;Maes H.E.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
50.In-situ monitoring of dry corrosion degradation of au ball bonds to al bond pads in plastic packages during HTSL

机译：HTSL过程中原位监测塑料封装中金球对铝焊盘的干腐蚀降解
- 作者：Ragay F.W.;Pol J.A.v.d.;Naderman J.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
51.Introduction of plastic encapsulated devices in systems operating under severe temperature conditions

机译：在恶劣温度条件下运行的系统中引入了塑料封装设备
- 作者：Hernandez R.;Le Peuch O.;Parmentier B.;Vial R.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
52.Investigation of trapped charge in oxides under fowler-nordheim stress using low bias conditions

机译：低偏压条件下在福勒-诺德海姆应力下研究氧化物中的俘获电荷
- 作者：Duane R.;Martin A.;ODonovan P.;Hurley P.;OSullivan P.;Mathewson A.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
53.Justifications for reducing HBM and MM ESD qualification test time

机译：减少HBM和MM ESD鉴定测试时间的理由
- 作者：Verhaege K.;Robinson-Hahn D.;Russ C.;Farris M.;Scanlon J.;D. Lin;Veltri J.;Groenseneken G.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
54.Method for precise determination of the statistical distribution of the input offset voltage of differential stages

机译：精确确定差分级输入失调电压统计分布的方法
- 作者：Thewes R.;Schindhelm T.;Tiebout M.;Wohlrab F.;Kollmer U.;Kessel S.;Schmitt-Landsiedel D.;Weber W.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
55.New experimental findings on hot carrier effects in deep submicrometer surface channel PMOS

机译：深亚微米表面沟道PMOS中热载流子效应的新实验发现
- 作者：Jong Tae Park;Sung Jun Jang;Chong Gun Yu;Byung Gook Park;Jong Duk Lee
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
56.Pulsed stress reliability investigations of schottky diodes and HBTS

机译：肖特基二极管和HBTS的脉冲应力可靠性研究
- 作者：Schubler M.;Krozew V.;Bock K.H.;Brandt M.;Vecci L.;Losi R.;Hartnagel H.L.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
57.Quality and reliability improvement through defect oriented failure analysis

机译：通过面向缺陷的故障分析提高质量和可靠性
- 作者：De Pauw P.;Van Haeverbeke S.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
58.Question marks to the extrapolation to lower temperatures in high temperature storage life (HTSL) testing in plastic encapsulated IC'S

机译：在塑料封装IC'S的高温存储寿命（HTSL）测试中外推到较低温度的问号
- 作者：Schuddeboom W.;Wubbenhorst M.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
59.Relationship between profile of stress generated interface traps and degradation of submicron LDD MOSFET'S

机译：应力产生的界面陷阱的轮廓与亚微米LDD MOSFET的退化之间的关系
- 作者：Okhonin S.;Hessler T.;Dutoit M.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
60.Reliability and degradation behaviors of semi-insulating fe-doped InP buried hetero structure lasers fabricated by MOVPE and dry etching technique

机译：MOVPE和干法刻蚀技术制备的半绝缘Fe掺杂InP埋层异质结构激光器的可靠性和退化行为
- 作者：Mawatari H.;Fukuda M.;Matsumoto S.-I.;Kishi K.;Itaya Y.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
61.Reliability improvement of single-poly quasi self-aligned bicmos BJTS using base surface arsenic compensation

机译：利用基表面砷补偿提高单晶准自对准双晶BJTS BJTS的可靠性
- 作者：Vendrame L.;Gravier T.;Kirtsch J.;Monroy A.;Chantre A.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
62.Reliability indicators for lift-off of bond wires in IGBT power-modules

机译：IGBT功率模块中键合线剥离的可靠性指标
- 作者：Farokhzad B.;Turkes P.;Wolfgang E.;Goser K.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
63.Reproducibility of field failures by ESD models - comparison of HBM, socketed CDM and non-socketed CDM

机译：ESD模型可重现现场故障-HBM，插座式CDM和非插座式CDM的比较
- 作者：Broddeck T.;Bauch H.;Guggenmos X.;Wagner R.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
64.Resistance changes due to cu transport and precipitation during electromigration in submicrometric Al-0.5Cu lines

机译：在亚微米级Al-0.5％Cu线路中电迁移过程中由于cu迁移和沉淀导致的电阻变化
- 作者：Scorzoni A.;de Murani I.;Balboni R.;Tamarri F.;Garulli A.;Fantin F.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
65.Risetime effects of HBM and square pulses on the failure thresholds of GGNMOS transistors

机译：HBM和方波的上升时间对GGNMOS晶体管的故障阈值的影响
- 作者：Musshoff C.;Wolf H.;Giesew H.;Eggew P.;Guggenmos X.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
66.Simulation of the gate burnout of GaAs MESFET

机译：GaAs MESFET栅极烧毁的仿真
- 作者：Vashchenko V.A.;Martynov J.B.;Sinkevitch V.F.;Tager A.S.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
67.Simulation study for the CDM ESD behaviour of the grounded-gate NMOS

机译：栅极NMOS的CDM ESD行为的仿真研究
- 作者：Russ C.;Verhaege K.;Bock K.;Groeseneken G.;Maes H.E.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
68.Study of the microstructure of IC interconnect metallisations using analytical transmission electron microscopy and secondary ion mass spectrometry

机译：利用分析型透射电子显微镜和二次离子质谱研究IC互连金属化的微观结构
- 作者：Cosemans P.;DOlieslaeger M.;de Ceuninck W.;de Schepper L.;Stals L.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
69.Study of the soft leakage current induced ESD on LDD transistor

机译：LDD晶体管上的软泄漏电流引起的ESD研究
- 作者：Wada T.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
70.Study on the reliability of an InP/InGaAsP integrated laser modulator

机译：InP / InGaAsP集成激光调制器的可靠性研究
- 作者：Hornung V.;Le Du F.;Starck C.;Gelly G.;Crusson C.;Laffitte D.;Vinchant J.F.;Lesterlin D.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
71.The application of advanced techniques for complex focused-ion-beam device modification

机译：先进技术在复杂聚焦离子束设备修改中的应用
- 作者：Abramo M.T.;Hahn L.L.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
72.The effect of hot electron stress on the DC and microwave characteristics of AlGaAs/InGaAs/GaAs PHEMTs

机译：热电子应力对AlGaAs / InGaAs / GaAs PHEMTs的直流和微波特性的影响
- 作者：Menozzi R.;Borgarino M.;Cova P.;Baeyens Y.;Fantini F.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
73.The impact of oxide degradation on the low frequency (I/F) noise behaviour of P channel MOSFETS

机译：氧化物降解对P沟道MOSFET的低频（I / F）噪声行为的影响
- 作者：Hurley P.K.;Sheehan E.;Moran S.;Mathewson A.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
74.The influence of process variations on the robustness of an audio power IC

机译：工艺变化对音频功率IC鲁棒性的影响
- 作者：Krabbenborg B.;Van Der Pol J.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
75.Threshold voltage degradation in plasma damaged cmos transistors - role of electron and hole traps related to charging damage

机译：等离子体损坏的CMOS晶体管中的阈值电压下降-与电荷损坏相关的电子和空穴陷阱的作用
- 作者：Brozek T.;Chan Y.D.;Viswanathan C.R.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
76.Turn-on speed of grounded gate NMOS ESD protection transistors

机译：接地栅极NMOS ESD保护晶体管的开启速度
- 作者：Meneghesso G.;Luchies J.R.M.;Kuper F.G.;Mouthhaan A.J.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
77.Validation of yield models with CMOS/SOS test structures

机译：使用CMOS / SOS测试结构验证良率模型
- 作者：Riviere V.;Toubul A.;Ben Amor S.;Gregoris G.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年
78.Wafer level measurement system for SARF characterization of metal lines

机译：用于金属线SARF表征的晶圆级测量系统
- 作者：Ciofi C.;De Marinis M.;Neri B.
- 会议名称：《Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on》 | 1996年