Risetime effects of HBM and square pulses on the failure thresholds of GGNMOS transistors

摘要

For 0.8/spl mu/m-GGNMOS transistors a lack of correlation between Human Body Model ESD testers conforming to current standards and transmission line pulsing (TLP) was observed. The paper demonstrates the influence of the initial 5% 40% risetime of TLP testers on the failure thresholds and failure signatures of transistors with single and multiple fingers.