首页> 外文会议>Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on >A new wafer level reliability method for evaluation of ionic induced PMOSFET drift effects
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A new wafer level reliability method for evaluation of ionic induced PMOSFET drift effects

机译:评估离子诱导的PMOSFET漂移效应的新晶圆级可靠性方法

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An ionic induced pMOSFET drift effect was investigated by deliberately enhancing the sodium concentration in interlevel dielectric layers. High frequency capacitance voltage and triangular voltage sweep (TVS) measurements as well as different bias temperature stress sequences were employed to show that the degradation is a two step process: sodium drift into active areas and charging of traps which were generated by sodium interactions with the semiconductor oxide interface. A special wafer level reliability method was developed which takes into consideration the two phase nature of the failure mechanism.
机译:通过故意提高层间电介质层中的钠浓度,研究了离子诱导的pMOSFET漂移效应。高频电容电压和三角电压扫描(TVS)测量以及不同的偏置温度应力序列被用来表明降解是一个两步过程:钠漂移进入活性区域,以及由于钠与硅相互作用而产生的陷阱电荷。半导体氧化物界面。考虑到故障机制的两相性质,开发了一种特殊的晶圆级可靠性方法。

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