首页> 外文会议>Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on >A new statistical model for fitting bimodal oxide breakdown distributions at different field conditions
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A new statistical model for fitting bimodal oxide breakdown distributions at different field conditions

机译:拟合不同现场条件下双峰氧化物击穿分布的新统计模型

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A new statistical model for fitting competing Weibull distributions is introduced. This model takes into account that capacitors with process-induced defects can also fail intrinsically if they survive the extrinsic breakdown mode. It is shown that this model in combination with a field acceleration law for intrinsic and extrinsic breakdown, can be implemented in a maximum likelihood fitting algorithm, allowing to fit a complete set of breakdown data obtained at different field conditions simultaneously in one single calculation.
机译:介绍了拟合竞争威布尔分布的新统计模型。该模型考虑到具有过程引起的缺陷的电容器也可以在内在击穿模式中存活时,内在的情况下也会失败。结果表明,该模型与用于内在和外部击穿的场加速度法组合,可以在最大似然拟合算法中实现,允许在一个单个计算中同时符合在不同现场条件下获得的一组完整的击穿数据。

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