A comparison of focused ion beam and electron beam induced deposition processes

摘要

Focused ion and electron beams are used for local deposition of conducting or insulating films. Major applications are integrated circuit design edit, prototype modification, repair of masks, and machining of microsystems. In this paper, the dependence of the deposition rates versus the beam parameters for both, ion beam and electron beam induced deposition were investigated and compared with each other. At the same time, a more precise consideration of the influence of secondary electrons on the deposition process was accomplished.