首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Comparison of Young's Modulus Dependency on Beam Accelerating Voltage between Electron-Beam- and Focused Ion-Beam-Induced Chemical Vapor Deposition Pillars
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Comparison of Young's Modulus Dependency on Beam Accelerating Voltage between Electron-Beam- and Focused Ion-Beam-Induced Chemical Vapor Deposition Pillars

机译:电子束和聚焦离子束诱导化学气相沉积柱之间杨氏模量对束加速电压的依赖性比较

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摘要

We investigated Young's modulus of amorphous carbon (a-C) pillars that exhibited different properties depending on which of two fabrication methods were used, electron-beam-induced chemical vapor deposition (EB-CVD) or focused ion-beam-induced CVD (FIB-CVD). The Young's modulus of the FIB-CVD pillars was almost linearly proportional to the accelerating voltage, while that of the EB-CVD pillars showed a completely opposite results. Secondary electrons seemed to play an important role in the increase of Young's modulus of the pillars grown using EB-CVD.
机译:我们研究了非晶碳(aC)柱的杨氏模量,这些柱表现出不同的特性,具体取决于所使用的两种制造方法,即电子束诱导化学气相沉积(EB-CVD)或聚焦离子束诱导CVD(FIB-CVD) )。 FIB-CVD柱的杨氏模量几乎与加速电压成线性比例,而EB-CVD柱的杨氏模量显示出完全相反的结果。二次电子似乎在增加使用EB-CVD生长的柱的杨氏模量中起重要作用。

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