New experimental findings on hot carrier effects in deep submicrometer surface channel PMOS

摘要

The correlation between gate current and substrate current in surface channel(SC) PMOS with effective channel length down to 0.15 /spl mu/m is investigated within the general framework of the lucky-electron model. It is found that the impact ionization rate increases, but the device degradation is not serious in deep submicrometer PMOS. To extend the lucky-electron model to deep submicrometer regime, we empirically model the effective pinch-off length as a function of the gate length and the gate bias voltage. SCIHE is suggested as the possible physical mechanism for the enhanced impact ionization and the gate current reduction.