FinFET pMOS double gate semiconductor device with uniaxial tensile strain applied to channel by shrinkable gate electrode material, current flow in 110 crystal orientation, and source and drain Schottky contacts with channel and manufacturing method thereof

摘要

A semiconductor device that has a pMOS double-gate structure, has a substrate, the crystal orientation of the top surface of which is (100), a semiconductor layer that is made of silicon or germanium, formed on the substrate such that currents flow in a direction of a first 110 crystal orientation, and channels are located at sidewall of the semiconductor layer, a source layer that is formed on the substrate adjacent to one end of the semiconductor layer in the direction of first 110 crystal orientation and is made of a metal or metal silicide to form a Schottky junction with the semiconductor layer; a drain layer that is formed on the substrate adjacent to the other end of the semiconductor layer in the direction of first 110 crystal orientation and is made of a metal or metal silicide to form a Schottky junction with the semiconductor layer; a gate electrode that is formed on the semiconductor layer in a direction of a second 110 crystal orientation perpendicular to the current flow direction, and a gate insulating film that is disposed between the semiconductor layer and the gate electrode, wherein a uniaxial tensile strain is applied to the semiconductor layer in the direction of the second 110 crystal orientation perpendicular to the current flow direction.