P-Channel Tri-Gate FinFETs Featuring Ni1 − yPty SiGe Source/Drain Contacts for Enhanced Drive Current Performance

摘要

We report the integration of nickel platinum germanosilicide $(hbox{Ni}_{1 - y}hbox{Pt}_{y}hbox{SiGe})$ contacts in tri-gate FinFETs with silicon germanium source/drain stressors for enhanced drive current performance. The structural and electrical properties of $hbox{Ni}_{1 - y}hbox{Pt}_{y}hbox{SiGe}$ contacts with platinum (Pt) concentrations up to 20 atomic % (at. %) were explored for FinFET integration. Our results show that $hbox{Ni}_{1 - y}hbox{Pt}_{y}hbox{SiGe}$ incorporated with 10 at. % Pt shows superior morphological stability, a suitably low sheet resistivity and the lowest Schottky hole barrier height $(Phi_{B}^{P})$ among the $hbox{Ni}_{1 - y}hbox{Pt}_{y}hbox{SiGe}$ candidates evaluated. The low $Phi_{B}^{P}$ (0.309 eV) provides a 15% reduction in series resistance $R_{rm series}$. With a superior morphological stability and reduced $R_{rm series}$, FinFETs integrated with $hbox{Ni}_{0.90}hbox{Pt}_{0.10}hbox{SiGe}$ contacts exhibit an overall 18% improvement in drive current compared to FinFETs with NiSiGe contacts.