Performance characteristics of p-channel FinFETs with varied Si-fin extension lengths for source and drain contacts

摘要

The length of Source/Drain (S/D) extension (L (SDE)) of nano-node p-channel FinFETs (pFinFETs) on SOI wafer influencing the device performance is exposed, especially in drive current and gate/S/D leakage. In observation, the longer L (SDE) pFinFET provides a larger series resistance and degrades the drive current (I (DS)), but the isolation capability between the S/D contacts and the gate electrode is increased. The shorter L (SDE) plus the shorter channel length demonstrates a higher trans-conductance (G (m) ) contributing to a higher drive current. Moreover, the subthreshold swing (S.S.) at longer channel length and longer L (SDE) represents a higher value indicating the higher amount of the interface states which possibly deteriorate the channel mobility causing the lower drive current.