FINFET HAVING UPPER SPACERS ADJACENT GATE AND SOURCE/DRAIN CONTACTS

摘要

Processes form integrated circuit apparatuses that include parallel fins, wherein the fins are patterned in a first direction, and parallel gate structures intersect the fins in a second direction perpendicular to the first direction. Also, source/drain structures are positioned on the fins between the gate structures, source/drain contacts are positioned on the source/drain structures, sidewall insulators are positioned between the gate structures and the source/drain contacts (wherein the sidewall insulators have a lower portion adjacent to the fins and an upper portion distal to the fins), and upper sidewall spacers are positioned between the upper portion of the sidewall insulators and the source/drain contacts.