Investigation of trapped charge in oxides under fowler-nordheim stress using low bias conditions

摘要

This work describes the influence of low current pulses during high current stress on the trapping properties of thin silicon dioxide layers. The determination of the trapped oxide charge during Fowler-Nordheim stress from low current steps is discussed. It is shown that low bias steps are not a reliable indicator of the amount of trapped charge in the oxide due to trapping of additional charges during this measurement period.