Bias and Oxide Thickness Dependence of Trapped Charge Buildup in MOS (Metal Oxide Semiconductors) Devices

摘要

A rate equation for charge buildup, which includes sweep-out, hole /electron trapping, tunneling, recombination, and the effects of internal fields, is generalized to apply to negative gate biases and include electron injection from the silicon and aluminum gate interfaces. The dependence of the midgap voltage shift on oxide thickness is explicitly examined. The theoretical results are verified by comparison with experimental results obtained on p-type silicon test capacitors of different oxide thicknesses under varying positive and negative gate biases.(RH)