LATERAL DOUBLE DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD OF A LATERAL DOUBLE DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE, CAPABLE OF SUPPRESSING THE CONCENTRATION OF A HIGH VOLTAGE BIAS TO A GATE EDGE DUE TO THE STEP HEIGHT OF A DOUBLE TRENCH

摘要

PURPOSE: A lateral double diffused metal oxide semiconductor device and a manufacturing method of a lateral double diffused metal oxide semiconductor device are provided to improve the operation reliability of a semiconductor by reducing the operation resistance of an LDMOS device.;CONSTITUTION: An oxidation film is formed on a semiconductor substrate(300). A first trench and a second trench are formed by etching a part of an oxide film and the semiconductor. A small trench is formed so that it is overlapped with the second trench. A stepped height is a dual trench of the second trench. An element isolation film for dividing semiconductor device area is formed on the first trench by burying an insulating layer.;COPYRIGHT KIPO 2010