COMPATIBLE VERTICAL DOUBLE DIFFUSED METAL OXIDE SEMICONDUCTOR TRANSISTOR AND LATERAL DOUBLE DIFFUSED METAL OXIDE SEMICONDUCTOR TRANSISTOR AND MANUFACTURE METHOD THEREOF

摘要

It is a kind of manufacture compatible vertical DMOS (VDMOS) transistor and lateral double diffusion metal oxide semiconductor (LDMOS) transistor include: provide a substrate, the substrate have a ldmos transistor region and vdmos transistor region; It is formed in the substrate of the buried layer regions n; Form the buried regions N of epitaxial layer; Form the ldmos transistor region and above-mentioned vdmos transistor region of isolated area; Form the ldmos transistor region of drift region; Form transistor area and the above-mentioned VDMOS ldmos transistors region of grid; Form the regions PBODY and above-mentioned vdmos transistor area ldmos transistor region; Form the transistor area in the regions N-type LDMOS GRADE; It is formed in NSINK vdmos transistors region, in the regions NSINK and the buried regions N; Form transistor area and the above-mentioned VDMOS ldmos transistors region of source electrode and drain electrode; With formed the areas P+ ldmos transistor region, in the regions P+ and source.