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COMPATIBLE VERTICAL DOUBLE DIFFUSED METAL OXIDE SEMICONDUCTOR TRANSISTOR AND LATERAL DOUBLE DIFFUSED METAL OXIDE SEMICONDUCTOR TRANSISTOR AND MANUFACTURE METHOD THEREOF
COMPATIBLE VERTICAL DOUBLE DIFFUSED METAL OXIDE SEMICONDUCTOR TRANSISTOR AND LATERAL DOUBLE DIFFUSED METAL OXIDE SEMICONDUCTOR TRANSISTOR AND MANUFACTURE METHOD THEREOF
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机译:垂直双扩散金属氧化物半导体晶体管和横向双扩散金属氧化物半导体晶体管及其制造方法
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摘要
A method for manufacturing compatible vertical double diffused metal oxide semiconductor (VDMOS) transistor and lateral double diffused metal oxide semiconductor (LDMOS) transistor includes: providing a substrate having an LDMOS transistor region and a VDMOS transistor region; forming an N-buried region in the substrate; forming an epitaxial layer on the N-buried layer region; forming isolation regions in the LDMOS transistor region and the VDMOS transistor region; forming a drift region in the LDMOS transistor region; forming gates in the LDMOS transistor region and the VDMOS transistor region; forming PBODY regions in the LDMOS transistor region and the VDMOS transistor region; forming an N-type GRADE region in the LDMOS transistor region; forming an NSINK region in the VDMOS transistor region, where the NSINK region is in contact with the N-buried layer region; forming sources and drains in the LDMOS transistor region and the VDMOS transistor region; and forming a P+ region in the LDMOS transistor region, where the P+ region is in contact with the source.
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