首页> 中文期刊> 《中国物理:英文版》 >Effect of NO annealing on charge traps in oxide insulator and transition layer for 4H-SiC metal-oxide-semiconductor devices

Effect of NO annealing on charge traps in oxide insulator and transition layer for 4H-SiC metal-oxide-semiconductor devices

         

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  • 来源
    《中国物理:英文版》 |2016年第9期|484-488|共5页
  • 作者单位

    School of Microelectronics, Xidian University, Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xi'an 710071, China;

    School of Microelectronics, Xidian University, Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xi'an 710071, China;

    Global Energy Interconnection Research Institute, Beijing 102209, China;

    Global Energy Interconnection Research Institute, Beijing 102209, China;

    School of Microelectronics, Xidian University, Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xi'an 710071, China;

    School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;

    School of Microelectronics, Xidian University, Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xi'an 710071, China;

    Zhuzhou CRRC Times Electric Company Limited, Zhuzhou 412001, China;

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  • 正文语种 eng
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