机译:金属Al 2 O 3-氮化物-氧化物半导体(MANOS)和半导体-氧化物-氮化物-氧化物半导体(SONOS)电荷陷阱闪存的耐久性和偏置温度不稳定性特征的比较研究
School of Electrical Engineering, Kookmin University, Seoul, 136-702, Republic of Korea;
School of Electrical Engineering, Kookmin University, Seoul, 136-702, Republic of Korea;
Department of Electronics Engineering, Korea University,Seoul 136-701, Republic of Korea;
Department of Electronics Engineering, Korea University,Seoul 136-701, Republic of Korea;
School of Electrical Engineering, Kookmin University, Seoul, 136-702, Republic of Korea;
Department of Electronic Engineering, Myongji University, Yongin,Gyeonggi,449-728, Republic of Korea;
manos memory; sonos memory; bias temperature instability; interface trap;
机译:STI边缘效应对局部电荷陷阱SONOS闪存单元中编程干扰的影响
机译:使用高$ k $陷阱层的SONOS型闪存中电荷陷阱的空间分布
机译:通过编程/擦除持久性分析NAND闪存中浮栅电荷的移位和生成的隧穿氧化物陷阱电荷分布的新方法
机译:使用SiO_2缓冲层和BE-MANOS充电捕获NAND闪存器件的漫步度研究
机译:SONOS非易失性存储设备中的均匀和局部电荷陷阱。
机译:SONOS闪存中氮化物内电荷迁移抑制的研究
机译:基板偏置辅助2步脉冲规划的研究实现4位SONOS电荷捕获闪存