Quantum mechanical study of trapped charge relaxation characteristics in metal-oxide-semiconductor devices

摘要

A new approach of applying transmission line techniques is introduced to study the time evolution of electron wavefunction localized in a trap quantum well in the oxide of MOS devices. Considering it as a one-dimensional problem and using the effective similarity with the energy band profile of a double-barrier quantum well, a model is developed to calculate the relaxation time of a trapped charge under flat band conditions. It is then used to calculate the effective relaxation time under externally applied electric fields. Results thus obtained are in reasonable agreement with the reported experimental observations.