A Quantum Mechanical Description of Charge Injection Devices (CID).

摘要

Of the two charge transfer techniques in use today,the charge injection device (CID) is analyzed by using quantum mechanical methods. First,the basic structure of the CID is reviewed. The CID consists of a linear array of metal-insulator-semiconductor (MIS) elements. Each element of the device is a photon detector whose function is to transform the incident image into a distribution of minority carriers located in an inversion region under the metal gates. Since the MIS structure is the primary mechanism by which this transformation operation occurs,its characteristics are analyzed. The prime concern of this paper is to investigate characteristics of the depletion region formed when voltage is applied to the MIS structure. By assuming that a constant electric field exists within the semiconductor and a constant potential exists within the insulator,approximate wave functions and energy levels for the minority carriers are found by computational methods for both regions. Finally,the theory of quantum transitions is used to derive an expression for the transition probability when light is absorbed by the MIS structure.