The application of advanced techniques for complex focused-ion-beam device modification

摘要

Advanced techniques for focused-ion-bearn (FIB) device modification have been developed for complex, multistep modifications to circuitry on planar chip technology. Applying gas-assisted etching (GAE) techniques for high-aspect-ratio milling and the selective milling of both conductive and insulating films enhances process latitude. Localized ion-beam-induced deposition of an insulating film provides reconstructive capability in previously modified areas. The application of both techniques for complex device modification of VLSI devices fabricated with CMOS process technology is reviewed.