Nanoscopic evaluation of semiconductor properties by scanning probe microscopies

摘要

By application of new or modified techniques of scanning tunneling and scanning force microscopes a comprehensive analysis of semiconductor materials and devices becomes feasible in conjunction with a detailed topological correlation. In this manner properties like electrical and thermal conductivity or mechanical properties can be imaged with nanometer resolution as well as local variations of diffusions length and locations of space charge regions. As most of these modes can be applied within one experiment a maximum of information can be obtained. Finally, a combination of scanning force and scanning electron microscope enables a direct comparison with the well-established electron beam methods.