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A new technique to characterize the early stages of electromigration-induced resistance changes at low current densities

机译:一种新技术,以表征电迁移诱导的电阻变化的早期阶段在低电流密度下

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One of the promising tools to study electromigration (EM) in metal lines is the high resolution resistance measuring (HRRM) technique. Since the resistance is sensitive both to structural and geometrical changes in a metal line, this technique is very useful to study the early stages of EM-induced damage. However, with a conventional HRRM-technique it is impossible to separate resistivity from geometrical variations. Here, a new analyzing technique is presented which is able to separate these two contributions during EM-expeniments at low current densities. It is found that only during the very first stage of EM resistance variations are due to resistivity variations. On the contrary, resistance variations /spl Delta/R/R2000ppm are mainly caused by a decrease in the cross section of the metal line.
机译:在金属线上研究电迁移(EM)的有希望的工具之一是高分辨率电阻测量(HRRM)技术。由于电阻既敏感到金属线中的结构和几何变化,则该技术对于研究EM诱导损伤的早期阶段非常有用。然而,通过传统的HRRM技术,不可能将电阻率与几何变异分离。这里,提出了一种新的分析技术,其能够在低电流密度下的EM-Prescement期间分离这两个贡献。发现,仅在EM电阻变化的第一阶段是由于电阻率变化。相反,电阻变化/ SPL DELTA / R / R <2000ppm主要由金属线的横截面的减少引起。

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