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Coherent control of charge currents, spin currents and carrier density in bulk gallium arsenide using non-degenerate transient grating techniques.

机译:使用非简并瞬变光栅技术相干控制体砷化镓中的电荷电流,自旋电流和载流子密度。

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摘要

Coherent control processes are studied in bulk GaAs at room temperature using nondegenerate transient grating techniques. These processes occur due to the phase dependent quantum interference between one- and two-photon absorption pathways of two non-collinear 775 and 1550 nm optical beams. Due to the beams' propagation directions, quantum interference is spatially modulated resulting in the generation of different types of gratings. Depending on the beams' polarizations and sample orientation, a current-induced grating or a directly-induced carrier density grating is observed. The grating diffraction efficiency is measured as a function of time with 830 nm probe pulses.; The temporal evolution of a charge current-induced grating generated by p-polarized optical beams is investigated. The grating diffraction efficiency initially rises, as the pump pulses arrive, then decays in ∼ 400 fs to a non-zero value from which it rises again and peaks in ∼ 5 ps, followed again by a decay within ∼13 ps. A hydrodynamic model is developed to explain the temporal behavior of this grating. Evolution of the charge current grating to the carrier density and temperature grating and its subsequent decay in time are described. The role of different carrier kinetics such as carrier cooling, inter-valley scattering and ambipolar diffusion in the temporal evolution of current-induced grating are also investigated. The use of the hydrodynamic model to describe the experimental results indicates an injection of carriers with a net quasi-particle momentum during the grating generation.; Generation of a spin current grating by cross-linearly polarized optical beams and its evolution to a spin density grating is also demonstrated. The grating diffraction efficiency initially rises with the pump pulses, followed by a decay within ∼3 ps, attributed to electron diffusion.; Carrier density gratings are also generated directly by the quantum interference between the optical beams. For beams' polarizations and crystal orientations that permit both directly-induced density grating and charge current-induced density grating to form, interference is observed between the two types of gratings which have approximately the same amplitude despite the different processes need to form them. This interference is investigated by measuring the diffraction efficiency as a function of sample orientation.
机译:使用非简并瞬变光栅技术,在室温下在体GaAs中研究了相干控制过程。这些过程是由于两个非共线775和1550 nm光束的单光子吸收路径和双光子吸收路径之间依赖于相位的量子干扰而发生的。由于光束的传播方向,量子干扰在空间上得到了调制,从而产生了不同类型的光栅。根据光束的偏振和样品方向,可以观察到电流感应光栅或直接感应的载流子密度光栅。光栅衍射效率是在830 nm探测脉冲下随时间变化的。研究了由p偏振光束产生的电荷电流感应光栅的时间演化。随着泵浦脉冲的到来,光栅衍射效率首先上升,然后在约400 fs处衰减至一个非零值,然后再次上升并在约5 ps达到峰值,随后又在约13 ps内衰减。开发了流体动力学模型来解释该光栅的时间行为。描述了电荷电流光栅到载流子密度和温度光栅的演变及其随后的时间衰减。还研究了不同的载流子动力学,例如载流子冷却,谷间散射和双极扩散在电流感应光栅的时间演化中的作用。用流体力学模型描述实验结果表明,在光栅生成过程中注入了具有净准粒子动量的载流子。还演示了通过交叉线偏振光束产生的自旋电流光栅,以及其演变成自旋密度光栅的过程。光栅衍射效率最初随着泵浦脉冲而增加,随后在约3 ps内由于电子扩散而衰减。载流子密度光栅也直接由光束之间的量子干涉产生。对于允许直接感应的密度光栅和电荷电流感应的密度光栅都形成的光束偏振和晶体取向,尽管需要形成不同的工艺,但在两种具有大致相同振幅的光栅之间观察到了干涉。通过测量衍射效率与样品取向的关系来研究这种干扰。

著录项

  • 作者

    Kerachian, Yaser.;

  • 作者单位

    University of Toronto (Canada).;

  • 授予单位 University of Toronto (Canada).;
  • 学科 Physics Optics.
  • 学位 Ph.D.
  • 年度 2007
  • 页码 127 p.
  • 总页数 127
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 光学;
  • 关键词

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