Reliability and degradation behaviors of semi-insulating fe-doped InP buried hetero structure lasers fabricated by MOVPE and dry etching technique

摘要

We clarified the degradation behavior of semi-insulating buried heterostructure lasers in which mesa structures were fabricated by RIE and then buried by MOVPE. The degradation rate and mode correlated with the quality of the BH interface. Based on the correlation, a condition for highly stable SIBH lasers was demonstrated and confirmed experimentally and statistically.