FABRICATION OF BURIED STRIPE SEMICONDUCTOR LASER USING DRY ETCHING FOR FORMATION OF STRIPE AND LASER FABRICATED BY THE METHOD

摘要

PURPOSE: To realize mass production of laser excellent in the uniformity of characteristics by etching a protective layer and an active layer by reactive ion etching using a specified gas mixture. ;CONSTITUTION: A first InP clad layer 22, an InGaAsP active layer 24 and an InP protective layer 28 are deposited continuously on an InP substrate 20 through epitaxial growth to form a double heterostructure. The heterostructure is then masked and a resin pattern is formed on the protective layer 28. Subsequently, the heterostructure is subjected to RIBE type dry etching down to the first clad layer. Consequently, an active stripe 32 is formed from the active layer 24. Such etching is performed in a frame provided with a Kaufman type ion source using a mixture of argon, hydrogen and methane as an etching gas. Subsequently, an active layer 32 is buried by performing a second epitaxial growth cycle.;COPYRIGHT: (C)1993,JPO