Process for producing a buried stripe semiconductor laser using dry etching for forming said stripe and laser obtained by this process

摘要

A process is disclosed for producing a buried stripe semiconductor laser using dry etching. According to the present invention, a heterostructure is formed by a first epitaxy, during which, on a substrate is deposited a confinement layer having a first doping type, an active layer and a protection layer. The protection layer and the active layer are etched by a reactive ion beam etching method using a gaseous mixture of argon, methane and hydrogen and this takes place down to the confinement layer, so as to form a stripe from the active layer. The stripe is buried by a second epitaxy in a semiconductor layer having a second type of doping which is the opposite of the first. Particular utility is found in the area of optical telecommunications, although other utilities are contemplated.