The X-ray sensitivity of semi-insulating polycrystalline CdZnTe thick films

摘要

The X-ray sensitivity is one of the important parameters indicating the detector performance. The X-ray sensitivity of semi-insulating polycrystalline CdZnTe:Cl thick films was investigated as a function of electric field, mean photon energy, film thickness, and charge carrier transport parameters and, compared with another promising detector materials. The X-ray sensitivities of the polycrystalline CdZnTe films with 350 μm thickness were about 2.2 and 6.2μC/cm~2/R in the ohmic-type and Schottky-type detector at 0.83 V/μm, respectively.