Resist process development for sub-100-nm ion projection lithography

摘要

Ion projection lithography (IPL) is designed to realize resist structures on the wafer plane well below 100 nm. Patterns from a stencilmask are printed with 4 x reduction using an electrostatic lens system. First exposures with the IPL Process Development Tool [Proc. SPIE 3997 (2001)] will start within the fourth quarter of this year. In the meantime, a baseline Resist process for I-line, DUV and e-beam resists has been established with exposures on a 1x masked ion beam lithography (MIBL) tool at IMS-Vienna.