Investigation of analytical model of turn-off loss for 4H-SiC high-voltage trench insulated gate bipolar transistors

摘要

In this paper, an analytical model of 4H-SiC high-voltage trench insulated gate bipolar transistors (IGBTs) turn-off loss is developed for a given operating condition and validated with a two-dimensional numerical simulation without experimental conditions. Moreover, the hole-carrier concentration profile is also modeled. The simulation results demonstrated that the analytical model is correct within an acceptable range. It has been verified that the analytical model matches well with simulation results with increasing carrier lifetime in the N-drift region. (C) 2018 The Japan Society of Applied Physics