Epitaxial growth and characterization of thick multi-layer 4H-SiC for very high-voltage insulated gate bipolar transistors

摘要

Techniques to fabricate thick multi-layer 4H-SiC epitaxial wafers were studied for very high-voltage p- and n-channel insulated gate bipolar transistors (IGBTs). Multi-layer epitaxial growth, including a thick p~- drift layer (～180 μm), was performed on a 4H-SiC n~+ substrate to form a p-IGBT structure. For an n-IGBT structure, an inverted growth process was employed, in which a thick n~- drift layer (～180 μm) and a thick p~(++) injector layer (＞55 μm) were epitaxially grown. The epitaxial growth conditions were modified to attain a low defect density, a low doping concentration, and a long carrier lifetime in the drift layers. Reduction of the forward voltage drop was attempted by using carrier lifetime enhancement processes, specifically, carbon ion implantation/annealing and thermal oxidation/annealing or hydrogen annealing. Simple PiN diodes were fabricated to demonstrate the effective conductivity modulation in the thick drift layers. The forward voltage drops of the PiN diodes with the p- and n-IGBT structures promise to obtain the extremely low-loss and very high-voltage IGBTs. The change in wafer shape during the processing of the very thick multi-layer 4H-SiC is also discussed.