INSULATED GATE BIPOLAR TRANSISTOR WITH MULTIPLE TRENCH AND METHOD FOR MENUFACTURING INSULATED GATE BIPOLAR TRANSISTOR WITH MULTIPLE TRENCH

摘要

An insulated gate bipolar transistor using a multiple trench is provided to improve a latch-up characteristic by forming an oxide layer after a portion of a bipolar transistor in which a hole current path is formed is removed by a trench process. A polysilicon gate(220) is formed in the center of a cell in one cell pitch. A trench-type insulation region(210) is formed of the sidewall on the edge of the cell. An electrode(230) is formed between the polysilicon gate and the trench-type insulation region, made of a conductor. The polysilicon gate can have such a depth as to penetrate N-type and P-type regions of a high density and reach an N-type region of a low density.