Mitigation Techniques for Single-Event-Induced Charge Sharing in a 90-nm Bulk CMOS Process

摘要

In this paper, mitigation techniques to reduce the increased SEU cross section associated with charge sharing in a 90-nm dual-interlocked-cell latch are proposed. The increased error cross section is caused by heavy-ion angular strikes depending on the direction of the ion strike, thereby exacerbating charge sharing among multiple circuit nodes. The use of nodal spacing as a mitigation technique shows an order of magnitude decrease on upset cross section as compared to a conventional layout, and the use of guard-rings show no noticeable effect on upset cross section.