机译:脉冲淬火基于28 nm批量CMOS过程的模拟单事件瞬态缓解模拟单事件瞬态缓解的辐射硬化
Natl Univ Def Technol Sch Comp Sci Changsha 410073 Peoples R China;
Natl Univ Def Technol Sch Comp Sci Changsha 410073 Peoples R China;
Natl Univ Def Technol Sch Comp Sci Changsha 410073 Peoples R China;
Natl Univ Def Technol Sch Comp Sci Changsha 410073 Peoples R China;
Natl Univ Def Technol Sch Comp Sci Changsha 410073 Peoples R China;
Natl Univ Def Technol Sch Comp Sci Changsha 410073 Peoples R China;
Natl Univ Def Technol Sch Comp Sci Changsha 410073 Peoples R China;
analog single-event transient (ASET); radiation-hardened by design (RHBD); single-event transient (SET); operational amplifier;
机译:布局拓扑对65 nm体CMOS工艺中单事件瞬态脉冲猝灭的影响
机译:16纳米大容量FinFET CMOS工艺中基于感测放大器的触发器设计的单事件性能
机译:65 nm双阱和三阱CMOS技术中虚拟门隔离逻辑节点之间的单事件瞬态脉冲猝灭特性
机译:工艺和温度对28nm FDSOI CMOS中单事件瞬变的影响
机译:基于Wilkinson Combiner方法的130nm CMOS技术中10GHz RF功率放大器设计
机译:用于高速ATLAS Muon漂移管检测器的28 nm批量CMOS模拟前端
机译:批量偏见作为模拟单事件瞬态缓解技术,损失可忽略不计