The Effect of Layout Topology on Single-Event Transient Pulse Quenching in a 65 nm Bulk CMOS Process

摘要

Heavy-ion microbeam and broadbeam data are presented for a 65 nm bulk CMOS process showing the existence of pulse quenching at normal and angular incidence for designs where the pMOS transistors are in common n-wells or isolated in separate n-wells. Experimental data and simulations show that pulse quenching is more prevalent in the common n-well design than the separate n-well design, leading to significantly reduced SET pulsewidths and SET cross-section in the common n-well design.