机译:基于连续电压阶跃补偿的高精度无电阻CMOS补偿带隙基准
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;
Resistors; Transistors; Photonic band gap; Thermal resistance; Temperature; Threshold voltage; Temperature dependence;
机译:无电阻高精度补偿CMOS带隙基准电压源
机译:不含电阻的高精度补偿CMOS带隙基准电压源
机译:具有0.13μmCMOS工艺的基极-发射极电流补偿的曲率校准带隙基准
机译:一个1.8V高精度补偿CMOS带隙基准
机译:温度补偿的CMOS和MEMS-CMOS振荡器,用于时钟发生器和频率基准。
机译:基于灰度补偿的TDI CMOS图像传感器固定模式噪声校正方法
机译:基于0.18μm工艺技术的带补偿电路的基于Cmos的带隙基准电压的设计与仿真