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A High-Precision Resistor-Less CMOS Compensated Bandgap Reference Based on Successive Voltage-Step Compensation

机译:基于连续电压阶跃补偿的高精度无电阻CMOS补偿带隙基准

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摘要

A curvature-compensated resistor-less bandgap reference (BGR), which is fabricated in 0.5-μm CMOS process, is proposed in this paper. The BGR utilizes successive voltagestep compensation to produce a temperature-insensitive voltage reference (VR), including one AVGS step for first-order compensation and another one for higher order curvature correction. Moreover, a supply noise bypassing technique is adopted to achieve good power supply rejection performance up to high frequency. Experimental results demonstrate that this BGR is able to produce a VR of 1.196 V with a temperature coefficient of 3.98 ppm/°C at 3.6-V supply voltage. A power-supply noise attenuation of -84 dB@100 Hz and -37 dB@100 kHz are easily achieved, and the line regulation is better than 0.19 mV/V when supply voltage varies from 2.1 to 5 V. The proposed reference occupies an active area of 356 μm × 150 μm and consumes a quiescent current of 38 μA.
机译:本文提出了一种采用0.5μmCMOS工艺制造的曲率补偿无电阻带隙基准(BGR)。 BGR利用连续的电压阶跃补偿来产生对温度不敏感的电压基准(VR),包括一个用于一级补偿的AVGS步骤和另一个用于高阶曲率校正的步骤。而且,采用了电源噪声旁路技术以达到良好的电源抑制性能,直到高频。实验结果表明,该BGR能够在3.6V电源电压下产生1.196 V的VR,其温度系数为3.98 ppm /°C。可以轻松实现-84 dB @ 100 Hz和-37 dB @ 100 kHz的电源噪声衰减,并且当电源电压从2.1V变为5V时,线路调整率优于0.19 mV / V。有源区为356μm×150μm,静态电流为38μA。

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  • 作者单位

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    Resistors; Transistors; Photonic band gap; Thermal resistance; Temperature; Threshold voltage; Temperature dependence;

    机译:电阻器;晶体管;光子带隙;热阻;温度;阈值电压;温度依赖性;

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