基于ΔVGS高阶温度补偿的高精度CMOS带隙基准源

摘要

利用两个工作在亚阈区的MOS管的栅源电压差ΔVGS产生高阶补偿量，对传统的BJT带隙基准源进行高阶温度补偿。设计一种基于ΔVGS高阶温度补偿的高精度CMOS带隙基准。电路基于CSMC 0.5μm标准CMOS工艺设计，仿真结果表明：在5 V电源电压下，基准输出电压为1.258 V；在-40℃~125℃的温度范围内，温度系数为1.24×10-6/℃；低频时电源抑制比PSRR为-68 dB；电源电压在3.5 V~6.5 V范围内工作，线性调整率为0.4 mV/V。适用于高精度带隙基准源。%The difference in the gate-source voltageΔVGS by two MOS that work in the weak inversion,produces the high-end compensation ,which carries on high-order temperature compensation for the traditional BJT bandgap reference. A high precision bandgap reference with high-order temperature compensation can be designed byΔVGS. And the circuit is designed by using CSMC 0.5 μm standard CMOS process. The simulation shows that:when the supply voltage is 5 V,the output reference voltage is 1.258 V;during the range of temperature-40℃~125℃,the temperature coefficient is 1.24×10-6/℃;the PSRR is-68 dB at low frequency;when the voltage works during 3.5 V~6.5 V,linear regulation is 0.4 mV/V. It is suitable for high precision bandgap voltage reference.