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A Resistorless High-Precision Compensated CMOS Bandgap Voltage Reference

机译:无电阻高精度补偿CMOS带隙基准电压源

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摘要

A resistorless high-precision compensated CMOS bandgap voltage reference (BGR), which is compatible with a standard CMOS process, is presented in this paper. A higher-order curvature correction method called base-emitter voltage linearization is adapted to directly compensate the thermal nonlinearity of base–emitter voltage. With proper mathematical operations of high-order temperature currents, most of the nonlinear temperature terms in$V_{mathrm {BE}}$can be greatly eliminated. The proposed BGR, which is implemented in 0.35-$mu ext{m}$CMOS technology, is capable of working down to 2 V supply voltages with 1.14055 V mean output voltage. A minimum temperature coefficient of 1.01 ppm/°C with a temperature range from −40 °C to 125 °C is realized, and a power-supply noise attenuation of 61 dB is achieved without any filter capacitors. The line regulation is better than 2 mV/V from 2 V to 5 V supply voltage while dissipating a maximum supply current of$33~mu ext{A}$. The active area of the presented BGR is 180$mu ext {m}imes 220,,mu ext{m}$.
机译:本文提出了一种与标准CMOS工艺兼容的无电阻器高精度补偿CMOS带隙基准电压源(BGR)。一种称为基极-发射极电压线性化的高阶曲率校正方法适用于直接补偿基极-发射极电压的热非线性。通过对高阶温度电流进行适当的数学运算, n $ V _ { mathrm {BE}} $ n可以大大消除。拟议的BGR,在0.35- n $ mu text {m} $ nCMOS技术,能够工作至2 V电源电压,平均输出电压为1.14055V。在−40°C至125°C的温度范围内实现了1.01 ppm /°C的最小温度系数,并且无需任何滤波电容器即可实现61 dB的电源噪声衰减。从2 V到5 V电源电压,线路调整率优于2 mV / V,同时耗散最大电源电流 n $ 33〜 mu text {A} $ n。所呈现的BGR的活动区域为180 n $ mu 文本{m} times 220 ,, mu 文本{m } $ n。

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  • 作者单位

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;

    College of Communication Engineering, Chengdu University of Information Technology, Chengdu, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;

    Tsinghua Energy Internet Research Institute, Chengdu, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;

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  • 正文语种 eng
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  • 关键词

    Resistors; Threshold voltage; Temperature distribution; CMOS technology; Photonic band gap; Generators;

    机译:电阻;阈值电压;温度分布;CMOS技术;光子带隙;发电机;

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